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Academic Journal

On the Evaluation of Gate Dielectrics for 4H‐SiC Based Power MOSFETs.

Subjects: DIELECTRIC devices; PERMITTIVITY; ELECTRIC fields

  • Source: Active & Passive Electronic Components. 5/16/2024, Vol. 2024, p1-12. 12p.

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Academic Journal

Applied Science & Technology Full Text (H.W. Wilson)

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Academic Journal

Applied Science & Technology Full Text (H.W. Wilson)

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Academic Journal

Applied Science & Technology Full Text (H.W. Wilson)

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Academic Journal

Applied Science & Technology Full Text (H.W. Wilson)

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Academic Journal

Applied Science & Technology Full Text (H.W. Wilson)

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Academic Journal

Applied Science & Technology Full Text (H.W. Wilson)

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Academic Journal

Applied Science & Technology Full Text (H.W. Wilson)

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Academic Journal

Applied Science & Technology Full Text (H.W. Wilson)

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Academic Journal

Applied Science & Technology Full Text (H.W. Wilson)

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  • 1-10 of  19,422 results for ""DIELECTRIC devices""