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Quantum dot selective area intermixing for broadband light sources.

• Authors : Zhou KJ; Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nano-Science and Technology, Broad Lane, Sheffield, UK. ; Jiang Q

Subjects: Light* ; Quantum Dots*; Luminescent Measurements/Luminescent Measurements/Luminescent Measurements/*instrumentation

• Source: Optics express [Opt Express] 2012 Nov 19; Vol. 20 (24), pp. 26950-7.Publisher: Optica Publishing Group Country of Publication: United States NLM ID: 101137103 Publication Model: Print Cited Medium: Internet ISSN:

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Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On‐Chip Light Sources.

• Authors : Shang, Chen; Hughes, Eamonn T.; Begley, Matthew R.

Subjects: LIGHT sources; EPITAXY; BUTT welding

• Source: Advanced Functional Materials; 11/2/2023, Vol. 33 Issue 45, p1-8, 8p

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确定性固态量子光源基础材料与器件.

• Authors : 赵军一; 刘润泽; 楼逸扬

Subjects: SURFACE passivation; PHOTONS; MOLECULAR beam epitaxy

• Source: Journal of Synthetic Crystals; Jun2023, Vol. 52 Issue 6, p960-981, 22p

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ZnSe/ZnS Core–Shell Quantum Dots Doped with Mn2+ Ions for Magnetic State-Manipulated Light Sources.

• Authors : Wang, Hongyue; Gao, Jialiang; Zhang, Miao

• Source: ACS Applied Nano Materials; 6/24/2022, Vol. 5 Issue 6, p8448-8456, 9p

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Applied Science & Technology Full Text (H.W. Wilson)

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Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots.

• Authors : Derebezov, I. A.^1,2 (AUTHOR) ; Gaisler, V. A.^1,3 (AUTHOR); Gaisler, A. V.¹ (AUTHOR)

Subjects: *LIGHT sources; *QUANTUM dots; *FINE structure (Physics)

• Source: Semiconductors. Oct2019, Vol. 53 Issue 10, p1304-1307. 4p.

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Applied Science & Technology Full Text (H.W. Wilson)

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Highly Tensile-Strained Self-Assembled Ge Quantum Dots on InP Substrates for Integrated Light Sources.

• Authors : Chen, Qimiao; Zhang, Liyao; Song, Yuxin

• Source: ACS Applied Nano Materials; 1/22/2021, Vol. 4 Issue 1, p897-906, 10p

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Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots.

• Authors : Herzog, Bastian; Lingnau, Benjamin; Kolarczik, Mirco

• Source: IEEE Journal of Selected Topics in Quantum Electronics; Nov/Dec2019, Vol. 25 Issue 6, p1-10, 10p

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Applied Science & Technology Full Text (H.W. Wilson)

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