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Temporary Changes of Current Flow Mechanisms in Erbium-Doped Porous Silicon.

• Authors : Khamzin, E. Kh.; Uslin, D. A.

Subjects: POROUS silicon; ERBIUM; CURRENT-voltage characteristics

• Source: Russian Microelectronics; Apr2024, Vol. 53 Issue 2, p161-166, 6p

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Applied Science & Technology Full Text (H.W. Wilson)

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Applied Science & Technology Full Text (H.W. Wilson)

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The Embedment of Conjugated MDMO−PPV Polymer in Microcavities of Porous Silicon at Excess Pressure from Solution.

• Authors : Osipov, E. V.¹ ; Martynov, I. L.¹; Kur’yanova, M. N.¹

Subjects: *POLYMERS; *POROUS silicon; *MICROCAVITY lasers

• Source: Technical Physics Letters. May2018, Vol. 44 Issue 5, p392-394. 3p.

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Nanocomposites of Silicon Oxides and Carbon: Its Study as Luminescent Nanomaterials.

• Authors : Mendoza Conde, Gabriel Omar; Luna López, José Alberto; Hernández Simón, Zaira Jocelyn

Subjects: SILICON oxide; NANOCOMPOSITE materials; NANOSTRUCTURED materials

• Source: Nanomaterials (2079-4991); Apr2023, Vol. 13 Issue 7, p1271, 14p

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Luminescence of Porous Nanostructured Strontium Titanate Films Doped with Eu3+ Ions.

• Authors : Rudenko, M. V. (AUTHOR); Raichynok, T. F. (AUTHOR); Radush, Y. V. (AUTHOR)

Subjects: STRONTIUM titanate; ANODIC oxidation of metals; LUMINESCENCE

• Source: International Journal of Nanoscience. Jun-Aug2019, Vol. 18 Issue 3/4, pN.PAG-N.PAG. 4p.

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Luminescence of electron-irradiated nanoporous silicate glasses.

• Authors : Andreeva, O.; Podsvirov, O.; Sidorov, A.

Subjects: *LUMINESCENCE; *POROUS silicon; *ELECTRON beams

• Source: Technical Physics Letters. Jul2011, Vol. 37 Issue 7, p630-631. 2p.

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Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements.

• Authors : Gongalsky, M. B.¹ ; Konstantinova, E. A.¹; Osminkina, L. A.¹

Subjects: *SILICON; *POROUS silicon; *NANOCRYSTALS

• Source: Semiconductors. Jan2010, Vol. 44 Issue 1, p89-92. 4p. 5 Graphs.

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Structure and luminescence study of nanoporous silicon layers with high internal surface.

• Authors : Makara, V. A.¹; Metnichenko, M. M.¹; Svezhentsova, K. V.¹

Subjects: *POROUS silicon; *SEMICONDUCTORS; *LUMINESCENCE

• Source: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003, Vol. 6 Issue 4, p492-495. 4p.

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Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum.

• Authors : Kiselev, V. A.; Polisadin, S. V.; Postnikov, A. V.

Subjects: *POROUS silicon; *LUMINESCENCE

• Source: Semiconductors. Jul97, Vol. 31 Issue 7, p704. 3p.

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