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Subject : heterostructures

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Academic Journal

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters.

Authors : Jmerik, Valentin; Nechaev, Dmitrii; Semenov, Alexey

Subjects: QUANTUM wells; HETEROSTRUCTURES; ACTIVE nitrogen

Source: Nanomaterials (2079-4991); Mar2023, Vol. 13 Issue 6, p1077, 24p

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Academic Journal

Synthesis of functional nitride membranes using sacrificial water-soluble BaO layers.

Authors : Chen, Shengru; Jin, Qiao; Lin, Shan

Subjects: TRANSITION metal nitrides; ATOMIC structure; LATTICE constants

Source: Journal of Applied Physics; 1/28/2023, Vol. 133 Issue 4, p1-7, 7p

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Academic Journal

Overcoming metal-rich surface chemistry limitations of ScAlN for high electrical performance heterostructures.

Authors : Engel, Zachary; Motoki, Keisuke; Matthews, Christopher M.

Subjects: SURFACE chemistry; MOLECULAR beam epitaxy; METALLIC films

Source: Journal of Applied Physics; 11/14/2022, Vol. 132 Issue 18, p1-9, 9p

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Academic Journal

Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier.

Authors : Gusev, A. S.; Sultanov, A. O.; Katkov, A. V.

Subjects: TWO-dimensional electron gas; GALLIUM nitride; MOLECULAR beam epitaxy

Source: Russian Microelectronics; Jun2024, Vol. 53 Issue 3, p252-259, 8p

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Academic Journal

Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency.

Authors : Zhang, Wei; Nikiforov, A. Yu.; Thomidis, C.

Subjects: MOLECULAR beam epitaxy; ALUMINUM; HETEROSTRUCTURES

Source: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Mar2012, Vol. 30 Issue 2, p02B119, 5p

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Academic Journal

Molecular beam epitaxy III-nitride growth for polarization sensitive devices based on M-plane films with in situ real time analysis by spectroscopic ellipsometry.

Authors : Boney, C.; Misra, P.; Pillai, R.

Subjects: NITRIDES; HETEROSTRUCTURES; ELLIPSOMETRY

Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; May/Jun2008, Vol. 26 Issue 3, p1049-1052, 4p, 6 Graphs

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Academic Journal

Thermal properties of cubic GaN/GaAs heterostructures grown by molecular beam epitaxy.

Authors : Macias, Marcos; Casallas-Moreno, Yenny Lucero; Camacho-Reynoso, Marlene

Subjects: MOLECULAR beam epitaxy; THERMAL properties; HETEROSTRUCTURES

Source: Journal of Applied Physics; 10/7/2020, Vol. 128 Issue 13, p1-6, 6p

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Academic Journal

Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates.

Authors : Nepal, Neeraj; Katzer, D. Scott; Lang, Andrew C.

Subjects: THIN films; TANTALUM; MOLECULAR beam epitaxy

Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2023, Vol. 41 Issue 4, p1-6, 6p

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Academic Journal

Surfactant effect of gallium during the growth of GaN on [formula] by plasma-assisted molecular beam epitaxy.

Authors : Gogneau, N.; Sarigiannidou, E.; Monroy, E.

Subjects: EPITAXY; MOLECULAR dynamics; MOLECULAR beam epitaxy

Source: Applied Physics Letters; 8/23/2004, Vol. 85 Issue 8, p1421-1423, 3p, 1 Diagram, 3 Graphs

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Academic Journal

Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures.

Authors : Casamento, Joseph; Lee, Hyunjea; Chang, Celesta S.

Subjects: CHEMICAL properties; HETEROSTRUCTURES; SCANDIUM

Source: APL Materials; Sep2021, Vol. 9 Issue 9, p1-9, 9p

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