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Suppressed Surface-Recombination Structure and Surface Passivation for Improving Current Gain of 4H-SiC BJTs.

• Authors : Friedrichs, Peter; Kimoto, Tsunenobu; Ley, Lothar

• Source: Silicon Carbide: Volume 2: Power Devices & Sensors; 2009, p445-465, 21p

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Surface Passivation and Functionalization of Si Nanocrystals.

• Authors : Pavesi, Lorenzo; Turan, Rasit

• Source: Silicon Nanocrystals; 2010, p155-172, 18p

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Surface Passivation and Emitter Recombination Parameters.

• Source: Photovoltaic Solar Energy; 2016, p114-124, 11p

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Gate Dielectrics and Surface Passivation Layers for Organic Field Effect Transistors.

• Authors : Wöll, Christof

• Source: Organic Electronics: Structural & Electronic Properties of OFETs; 2009, p373-400, 28p

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Effect of Surface Dopant Concentration.

• Authors : Black, Lachlan E.

• Source: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; 2016, p97-139, 43p

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Thinned Backside-Illuminated (BSI) Imagers.

• Authors : De Munck, Koen; Minoglou, Kyriaki; De Moor, Piet

• Source: Ultra-thin Chip Technology & Applications; 2011, p337-352, 16p

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Conclusion.

• Authors : Black, Lachlan E.

• Source: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; 2016, p177-180, 4p

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Relationship Between Al $$_{2}$$ O $$_{3}$$ Bulk and Interface Properties.

• Authors : Black, Lachlan E.

• Source: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; 2016, p155-176, 22p

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Effect of Post-Deposition Thermal Processing.

• Authors : Black, Lachlan E.

• Source: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; 2016, p79-96, 18p

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Electrical Properties of the Si–Al $$_{2}$$ 2 O $$_{3}$$ 3 Interface.

• Authors : Black, Lachlan E.

• Source: New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface; 2016, p41-65, 25p

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