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Applied Science & Technology Full Text (H.W. Wilson)

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Applied Science & Technology Full Text (H.W. Wilson)

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Applied Science & Technology Full Text (H.W. Wilson)

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Microstructural properties and atomic arrangements in GaN/sapphire and AlxGa1-xN/AlN/GaN/sapphire heterostructures.

• Authors : Kim, T. W.; Lee, D. U.; Lee, H. S.

Subjects: HETEROSTRUCTURES; SUPERLATTICES; ELECTRON microscopy

• Source: Journal of Applied Physics; 12/15/2004, Vol. 96 Issue 12, p7118-7121, 4p, 4 Black and White Photographs, 3 Diagrams

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Electrically detected and microwave-modulated Shubnikov–de Haas oscillations in an Al[sub 0.4]Ga[sub 0.6]N/GaN heterostructure.

• Authors : Hang, D. R.; Liang, C.-T.; Juang, J.-R.

Subjects: OSCILLATIONS; GALLIUM nitride; HETEROSTRUCTURES

• Source: Journal of Applied Physics; 2/15/2003, Vol. 93 Issue 4, p2055, 4p, 5 Graphs

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Applied Science & Technology Full Text (H.W. Wilson)

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Applied Science & Technology Full Text (H.W. Wilson)

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Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors.

• Authors : Jo, Hyeon-Bhin; Park, Jung-Ho; Son, Seung-Woo

Subjects: METAL oxide semiconductor field-effect transistors; ELECTRIC capacity; GALLIUM arsenide

• Source: AIP Advances; Jul2018, Vol. 8 Issue 7, pN.PAG-N.PAG, 7p

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Applied Science & Technology Full Text (H.W. Wilson)

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Applied Science & Technology Full Text (H.W. Wilson)

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