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Low-energy ion implants target shallow junctions for deep-submicron ICs.

• Authors : Bursky, Dave

Subjects: ION implantationEATON Corp. PLC EATON Corp. PLC EATON Corp. PLC ETN

• Source: Electronic Design. 09/02/97, Vol. 45 Issue 19, p72. 1p. 2 Diagrams.

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Applied Science & Technology Full Text (H.W. Wilson)

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Processing advances shrink lines and sharpen device geometries to enhance performance.

• Authors : Bursky, David

• Source: Electronic Design. 1981, Vol. v29, pages. 8

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IEDM zeroes in on advanced models for complex devices.

• Authors : Ajluni, Cheryl

Subjects: ENGINEERING models; ELECTRONICS conventions

• Source: Electronic Design. 12/01/98, Vol. 46 Issue 27, p54. 3p.

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Power Semiconductors: Past, Present, and Future.

• Authors : ALAGAPPAN, ASHOK

Subjects: POWER semiconductors

• Source: Electronic Design. Jul/Aug2019, Vol. 67 Issue 4, p38-46. 5p. 1 Diagram, 1 Chart, 2 Graphs.

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Modeling and simulation make designing easier.

• Authors : Ajluni, Cheryl

Subjects: ELECTRONIC circuit design; ELECTRONICS conventions

• Source: Electronic Design. 12/02/96, Vol. 44 Issue 25, p68. 4p. 2 Diagrams, 1 Graph.

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Developments clearing obstacles to single-chip radios.

• Authors : Mannion

Subjects: RADIO (Medium); ELECTRONIC amplifiers; RADIO frequency

• Source: Electronic Design. 12/06/99, Vol. 47 Issue 25, p92. 3p. 3 Black and White Photographs, 2 Diagrams.

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SiGe HBTs drive biCMOS deeper into RF's realm.

• Authors : Bindra, Ashok

Subjects: BIPOLAR transistors; ELECTRIC properties of silicon; ELECTRIC properties of germanium

• Source: Electronic Design. 06/28/99 Supplement, Vol. 47 Issue 13, p7. 3p. 1 Color Photograph.

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IEDM focuses on advanced device models.

• Authors : Ajluni, Cheryl

Subjects: ELECTRONIC circuits; ELECTRONICS conventions; MODELING (Sculpture)

• Source: Electronic Design. 12/01/97, Vol. 45 Issue 27, p50. 3p.

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Silicon-bipolar Fs chase GaAs FETs.

Subjects: BIPOLAR integrated circuits; GALLIUM arsenide semiconductors

• Source: Electronic Design. 9/2/93, Vol. 41 Issue 18, p28. 1/3p.

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