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Impact of Multi-Layer Carbon-Doped/Undoped Buffer on Suppression of Current Collapse in / HFETs.

• Authors : Kang, Hee-Sung; Kim, Dong-Seok; Won, Chul-Ho

Subjects: MULTIWALLED carbon nanotubes; MODULATION-doped field-effect transistors; BUFFER action (Chemistry)

• Source: International Journal of High Speed Electronics & Systems. Sep/Dec2014, Vol. 23 Issue 3/4, p-1. 13p.

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Development of Chip Separation Technique for InGaN-Based Light Emitting Diodes.

• Authors : Lee, Jae-Hoon; Kim, Nam-Seung; Lee, Jung-Hee

Subjects: LIGHT emitting diodes; SEMICONDUCTOR diodes; FEMTOSECOND lasers

• Source: IEEE Journal of Quantum Electronics. Dec2011, Vol. 47 Issue 12, p1493-1498. 6p.

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RECESSED-GATE NORMALLY-OFF MOSFET TECHNOLOGIES.

• Authors : IM, KI-SIK; KIM, KI-WON; KIM, DONG-SEOK

Subjects: METAL oxide semiconductor field-effect transistors; AMMONIUM hydroxide; THRESHOLD voltage

• Source: International Journal of High Speed Electronics & Systems. Mar2012, Vol. 21 Issue 1, p-1. 20p.

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SHORT CHANNEL, FLOATING BODY, AND 3D COUPLING EFFECTS IN TRIPLE-GATE MOSFET.

• Authors : NA, KYOUNG-IL; LEE, JUNG-HEE; CRISTOLOVEANU, SORIN

Subjects: METAL oxide semiconductor field-effect transistors; FIELD-effect transistors; METAL oxide semiconductors

• Source: International Journal of High Speed Electronics & Systems. Dec2008, Vol. 18 Issue 4, p773-782. 10p. 1 Diagram, 5 Graphs.

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Normally‐off vertical‐type mesa‐gate GaN MOSFET.

• Authors : Won, Chul‐Ho (AUTHOR); Kim, Ki‐Won (AUTHOR); Kim, Dong‐Seok (AUTHOR)

• Source: Electronics Letters (Wiley-Blackwell). Nov2014, Vol. 50 Issue 23, p1749-1751. 3p.

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Strategies for promoting Korean design excellence.

• Authors : Chung, Kyung Won

Subjects: INDUSTRIAL design; ECONOMIC historyKOREA

• Source: Design Issues. Summer98, Vol. 14 Issue 2, p3. 13p. 3 Diagrams, 1 Chart.

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