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Academic Journal

Brain-inspired Computing: Light-activated artificial synapses.

Authors : Mullasseri, Sileesh; Jadav, Ravindra; Hans, Aradhana

Subjects: *ORGANIC field-effect transistors

Source: Current Science (00113891). 7/10/2024, Vol. 127 Issue 1, p11-12. 2p.

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Periodical

Driving Robotics and Embedded Motion Applications with Next-Generation Servo Technology.

Authors : Crumlish, Dean¹

Subjects: *METAL oxide semiconductor field-effect transistors; *SEMICONDUCTOR manufacturing; *FIELD-effect transistors

Source: Machine Design. Mar/Apr2024, Vol. 96 Issue 2, p8-9. 2p. 2 Color Photographs.

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Academic Journal

Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric.

Authors : Liu, Zi-Chun¹ (AUTHOR); Li, Jia-Cheng¹ (AUTHOR); Yang, Hui-Xia¹ (AUTHOR)

Subjects: *POWER transistors; *FIELD-effect transistors; *GATE array circuits

Source: Science Bulletin. Jun2024, Vol. 69 Issue 12, p1848-1851. 4p.

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Academic Journal

N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning.

Authors : Collins, Henry¹ (AUTHOR) ; Akso, Emre¹ (AUTHOR); Clymore, Christopher J.¹ (AUTHOR)

Subjects: *MODULATION-doped field-effect transistors; *DIELECTRICS; *NITROGEN

Source: Electronics Letters (Wiley-Blackwell). Jul2024, Vol. 60 Issue 13, p1-3. 3p.

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Academic Journal

Ge‐based graphene FET for low‐temperature electronics.

Authors : Wang, Chen^1,2 (AUTHOR); Hong, Weida^1,2 (AUTHOR); Zhang, Miao¹ (AUTHOR)

Subjects: *GRAPHENE; *FIELD-effect transistors; *RADIO frequency

Source: Electronics Letters (Wiley-Blackwell). Jul2024, Vol. 60 Issue 13, p1-4. 4p.

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Academic Journal

A novel field plate with arcuate end for improving GaN HEMTs.

Authors : Cheng, Junji¹ (AUTHOR); Liu, Jiaping¹ (AUTHOR); Luo, Yuanjie² (AUTHOR)

Subjects: *MODULATION-doped field-effect transistors; *POWER semiconductors; *BREAKDOWN voltage

Source: Electronics Letters (Wiley-Blackwell). Jun2024, Vol. 60 Issue 12, p1-4. 4p.

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Academic Journal

Rapid synthesis of MoS2 for transistors and memristors.

Authors : Lin, Weiyi¹ (AUTHOR)

Subjects: *MEMRISTORS; *FIELD-effect transistors; *ELECTRON mobility

Source: Applied Physics Letters. 6/10/2024, Vol. 124 Issue 24, p1-4. 4p.

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Academic Journal

Electrical and dielectric properties of optimized cubic structure with promising morphological texture in Ce0.8Zr0.2O2.

Authors : Kumari, Sushama¹ (AUTHOR); Sharma, Saurabh Kumar² (AUTHOR); Meena, Ramcharan³ (AUTHOR)

Subjects: *DIELECTRIC properties; *METAL oxide semiconductor field-effect transistors; *DIELECTRIC loss

Source: Bulletin of Materials Science. Sep2024, Vol. 47 Issue 3, p1-9. 9p.

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Academic Journal

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors.

Authors : Ghosh, Rittik¹ (AUTHOR); Nelapati, Rajeev Pankaj¹ (AUTHOR); Saha, Priyanka² (AUTHOR)

Subjects: *TUNNEL field-effect transistors; *FIELD-effect transistors; *SENSITIVITY analysis

Source: PLoS ONE. 6/11/2024, Vol. 19 Issue 6, p1-15. 15p.

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Academic Journal

Study of MoN gate impact on GaN high electron mobility transistor.

Authors : Zhang, Lixing¹ (AUTHOR); Lv, BeiBei¹ (AUTHOR); Ding, Xu² (AUTHOR)

Subjects: *MODULATION-doped field-effect transistors; *GALLIUM nitride; *MOLYBDENUM nitrides

Source: Electronics Letters (Wiley-Blackwell). May2024, Vol. 60 Issue 10, p1-3. 3p.

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