Impact of Multi-Layer Carbon-Doped/Undoped Buffer on Suppression of Current Collapse in / HFETs.

MULTIWALLED carbon nanotubes; MODULATION-doped field-effect transistors; BUFFER action (Chemistry); HETEROJUNCTIONS; LEWIS acidity

We present a new semi-insulating buffer layer, which consists of multiple carbon-doped and undoped layers, suitable for // heterojunction field effect transistors. The proposed buffer structure was designed to minimize the total carbon incorporation into the buffer layer because carbon atoms in are a possible cause of deterioration in structural quality and device characteristics such as current collapse. With this new buffer structure, current collapse in MISHFET is drastically reduced while maintaining high breakdown characteristics. We argue that electron transfer from the undoped to the carbon-doped layer leads to total depletion of the undoped layer and effectively compensates the deep-acceptor states in the carbon-doped layer. This mechanism results in high-insulating buffer characteristic and opens the avenue for current collapse suppression in // MISHFET. [ABSTRACT FROM AUTHOR]

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