Charge control for high-current ion implant.

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  • Additional Information
    • Subject Terms:
      ION implantation; SEMICONDUCTOR wafers
    • Abstract:
      Discusses optimum conditions for semiconductor wafer-charging control during ion implantation. Inherent limitations of beam neutralization through residual gas ionization; Comparison of plasma electron flood (PEF) and secondary electron flood (SEF); Development of a test that determines whether electrons with energies higher than 10 to 20 eV are generated and transported to wafers.