Erbium-doped porous silicon luminesces at 1.54 microns.

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  • Source:
    Laser Focus World. Jul94, Vol. 30 Issue 7, p13. 1/4p.
  • Subject Terms:
    *POROUS silicon
  • Additional Information
    • Abstract:
      Reports on the development of an erbium-implanted porous silicon structure by scientists at Spire Corp. that has an electrically activated emission of 1.54 microns at room temperature. Advantages over conventional silicons; Luminescence peak; Temperature stability.