Specific features of the photodielectric effect in amorphous AsSe layers.

The photodielectric effect (PDE) in amorphous arsenic triselenide (AsSe) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum. [ABSTRACT FROM AUTHOR]

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