The Dislocation Anharmonicity in Silicon.

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    • Abstract:
      The effect of the dislocation anharmonicity on the Young modulus in bending silicon single crystals was studied. It is shown that changes in the Young modulus are caused by the contribution of dislocations to the fourth-order elasticity moduli. It is revealed experimentally that the bending deformation in both donor and acceptor silicon crystals favors the appearance mainly of the edge dislocations with the axes forming an angle Θ ∼ 90° with the Burgers vector. [ABSTRACT FROM AUTHOR]
    • Abstract:
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