Scanning Tunneling Microscopy of the Nonequilibrium Interaction of Impurity States at Semiconductor Surfaces.

Interaction of two localized impurity states of Si atoms at a GaAs surface was studied by scanning tunneling microscopy and spectroscopy. The effects of a twofold “switching” on and off of the states of each of the interacting atoms, the tunneling-interaction-induced mutual level pulling of these states, and the level stabilization near E[sub F] were observed. These effects are explained in terms of the extended Anderson model. © 2000 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR]

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