Estudio del mecanismo de transporte en películas de silicio poroso. (Spanish)

The transport mechanisms in Porous Silicon Layer (PSL) were identified by Current-Voltage (I-V) measurements. The PSL was made by anodic etching of p-type crystalline (100) Si wafers and resistivity of 1-5 Ω-cm. The electrical resistivity measured of the PSL was of 4.48 x 10⁹ Ω-cm. The carrier transport in the PSL is space charge limited (SCL) due to the trapped charge in the different defect states. Furthermore, it was found that in accordance with the bias mode and the magnitude of the applied bias to the structure, the change in the charge state of the deep defect centers cause changes in the trap density, Nt. [ABSTRACT FROM AUTHOR]

Se identificaron los mecanismos de transporte en películas-de-silicio-poroso (PSiP) por mediciones de Corriente-Voltaje. Las PSiP se hicieron por anodización de obleas de silicio cristalino tipo p, con orientación (100) y resistividad de 1-5 Ω- cm. La resistividad eléctrica medida en las PSiP fue de 4.48 x 10⁹ Ω-cm. El transporte de carga en la PSiP está limitado por regiones de carga espacial (SCL), debido a la carga atrapada en los diversos estados de defecto. Se encontró que de acuerdo al modo de polarización y a la magnitud del potencial aplicado a la estructura planar, se induce la participación de centros de defecto profundos ocasionando que la densidad de trampas Nt, cambie. [ABSTRACT FROM AUTHOR]

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