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Response of SOI microdosimeter in fast neutron beams: experiment and Monte Carlo simulations.
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- Additional Information
- Source:
Publisher: Istituti Editoriali e Poligrafici Internazionali Country of Publication: Italy NLM ID: 9302888 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1724-191X (Electronic) Linking ISSN: 11201797 NLM ISO Abbreviation: Phys Med Subsets: MEDLINE
- Publication Information:
Publication: Pisa : Istituti Editoriali e Poligrafici Internazionali
Original Publication: Lugano, Switzerland : Giardini editori S.A.,
- Subject Terms:
- Abstract:
In this study, Monte Carlo codes, Geant4 and MCNP6, were used to characterize the fast neutron therapeutic beam produced at iThemba LABS in South Africa. Experimental and simulation results were compared using the latest generation of Silicon on Insulator (SOI) microdosimeters from the Centre for Medical Radiation Physics (CMRP). Geant4 and MCNP6 were able to successfully model the neutron gantry and simulate the expected neutron energy spectrum produced from the reaction by protons bombarding a 9 Be target. The neutron beam was simulated in a water phantom and its characteristics recorded by the silicon microdosimeters; bare and covered by a 10 B enriched boron carbide converter, at different positions. The microdosimetric quantities calculated using Geant4 and MCNP6 are in agreement with experimental measurements. The thermal neutron sensitivity and production of 10 B capture products in the p+ boron-implanted dopant regions of the Bridge microdosimeter is investigated. The obtained results are useful for the future development of dedicated SOI microdosimeters for Boron Neutron Capture Therapy (BNCT). This paper provides a benchmark comparison of Geant4 and MCNP6 capabilities in the context of further applications of these codes for neutron microdosimetry.
(Copyright © 2021 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.)
- Contributed Indexing:
Keywords: BNCT; FNT; Geant4; MCNP; accelerator; microdosimetry; solid-state
- Accession Number:
Z4152N8IUI (Silicon)
- Publication Date:
Date Created: 20211023 Date Completed: 20211102 Latest Revision: 20211102
- Publication Date:
20240829
- Accession Number:
10.1016/j.ejmp.2021.09.008
- Accession Number:
34688192
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