Radiation-stimulated relaxation of internal stresses in homoepitaxial gallium phosphide films.

The electroreflection method is used to study the E 0 and E 0 + Δ0 electron transitions in homoepitaxial n-GaP (111) films with the electron concentration of 5.7 × 1023 m−3 before and after irradiation with 60Co γ-ray photons with the dose range from 105 to 106 rad at room temperature using the electrolythic method. Splitting of the low-energy extremum is observed after irradiation. A decrease in the internal stresses in the film as a result of irradiation with γ-ray photons is estimated from the variations in the electron-transition energy and collisional parameter of broadening. An increase in the time of energy relaxation of charge carriers after irradiation is also estimated. [ABSTRACT FROM AUTHOR]

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