Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.

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  • Author(s): Yao J;Yao J; Zhong L; Natelson D; Tour JM
  • Source:
    Journal of the American Chemical Society [J Am Chem Soc] 2011 Feb 02; Vol. 133 (4), pp. 941-8. Date of Electronic Publication: 2010 Dec 22.
  • Publication Type:
    Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.
  • Language:
    English
  • Additional Information
    • Source:
      Publisher: American Chemical Society Country of Publication: United States NLM ID: 7503056 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1520-5126 (Electronic) Linking ISSN: 00027863 NLM ISO Abbreviation: J Am Chem Soc Subsets: MEDLINE
    • Publication Information:
      Publication: Washington, DC : American Chemical Society
      Original Publication: Easton, Pa. [etc.]
    • Subject Terms:
      Electronics/*methods ; Nanotechnology/*methods ; Silicon Compounds/*chemistry; Electric Impedance ; Nonlinear Dynamics ; Surface Properties
    • Abstract:
      Silicon oxide (SiO(x)) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiO(x). These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiO(x) as a component. The actual electrical phenomena can be the result of conduction from SiO(x) at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.
    • Accession Number:
      0 (Silicon Compounds)
    • Publication Date:
      Date Created: 20101224 Date Completed: 20110510 Latest Revision: 20110127
    • Publication Date:
      20240829
    • Accession Number:
      10.1021/ja108277r
    • Accession Number:
      21175171