硅掺杂对不同衬底的氮化铝薄膜的影响研究. (Chinese)

Effect of silicon doping on aluminum nitride films with different substrates. (English)

Silicon is selected as the N-type impurity. Experimental study was performed by high temperature thermal diffusion. Pure silicon is deposited on the prepared AlN thin films on Si/Al2O3 substrate by magnetron sputtering. The sputtering time of silicon determines the thickness of the silicon layer, thereby determining the doping dose of silicon. After high temperature (1150℃) thermal diffusion under nitrogen atmosphere for 4 hours, silicon atoms on the surface of the AlN thin films are forced into the AlN lattice to replace the position of aluminum atoms to form silicon doped AlN thin films. Effective silicon doping causes the AlN (002) diffraction peak to shift towards a large angle. Higher silicon dose makes greater shift angle. Energy Dispersive Spectrometer tested results indicate that the substrate silicon will act as a fixed diffusion source and diffuse into the film, increasing the unintentional doping concentration, so the silicon element can be measured in the whole area of the film cross section. The sample of the sapphire substrate shows cracks after thermal diffusion. [ABSTRACT FROM AUTHOR]

选择硅作为N型杂质源,采用高温热扩散的方式进行实验研究,采用磁控溅射法在硅/蓝宝石村 底上外延的AIN 薄膜上沉积纯硅、硅的溅射时间决定了硅层的厚度,从而决定了硅的掺杂剂量,在氮气 气氛下高溫(1150℃)热扩散4小时后,AIN 薄膜表面的硅原子扩散进入AIN晶格,取代铝原子的位置,形 成掺杂硅的AIN 薄膜,有效的硅掺杂导致AIN(002)衍射峰向一个较大的角度偏移,且偏移的角度随掺杂 的浓度升高而增大,且硅衬底上的样品,使用能量色散光谱仪测试结果表明,衬底硅将作为固定的扩散源 扩散到薄膜中,增加非故意掺杂浓度,因此可以在整个薄膜截面内测量到硅元素,蓝宝石的衬底的样品在 热扩散后出现裂纹, [ABSTRACT FROM AUTHOR]

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