Author Correction: Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers.

This document is a correction notice for an article titled "Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers" published in Scientific Reports. The correction addresses errors in Figure 2 of the original article, specifically the incorrect depiction of the CN Concentration range. The corrected version of the article is now available. The authors of the article are Weicheng Cao, Chunyan Song, Hui Liao, Ningxuan Yang, Rui Wang, Guanghui Tang, and Hongyu Ji. [Extracted from the article]

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