Comparison of the structural characteristics of Al and B company doped ZnO thin films dropped on Si, Si pulsed by laser, and porous silicon.

Zinc oxide (ZnO) thin films showed a crystallization in the preferential plane (002) perpendicular to the substrate when deposited on p-type silicon (p-Si), silicon pulsed by Nd-YAG laser of a 6 Hz frequency, and porous silicon (PS). When ZnO was co-doped with boron and aluminum in a fixed proportion of 0.5% of boron and (0.5, 1, 1. 5, 2) of aluminum ZnO:(B+Al), prepared by spray pyrolysis technique, with 200 nm. This resulted in leads to an absence of the peaks in XRD patterns of these thin films, which indicates the effect of the impurities on the crystallization of the membrane material. The surface topography was tested by Scanning Electron Microscope (SEM) instrument and Transmission Electron Microscope (TEM) tool, It has shown the average grain size of the thin films is shaped like spherical nanoparticles. [ABSTRACT FROM AUTHOR]

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